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 NTE284 (NPN) & NTE285 (PNP)
Silicon Complementary Transistors Audio Amplifier Output
Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications: D Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base to Emitter Voltage Current Gain Bandwidth Product Output Capacitance NTE284 NTE285 Symbol ICBO IEBO Condition VCB = 90V, IE = 0 VEB = 5V, IC = 0 Min - - 180 5 70 - - - - - Typ - - - - - - - 6 300 450 Max 100 100 - - 140 3.0 2.5 - - - Unit A A V V V V V MHZ pF pF
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 0.1A, IB = 0 V(BR)EBO IE = 10mA, IC = 0 hFE VCE(sat) VBE fT Cob VCE = 5V, IC = 2A IC = 10A, IB = 1A VCE = 5V, IC = 10A VCE = 5V, IC = 2A VCB = 10V, IE = 0, f = 1MHZ
Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and NTE285 (PNP).
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case


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